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| 2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 !Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. !External dimensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1.0 0.9 14.5 4.4 1.5 2.5 9.5 B RBE 4k ROHM : CPT3 EIAJ : SC-63 E (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) C : Collector B : Base E : Emitter 2SB1239 6.8 2.5 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1183 2SB1239 Tj Tstg Symbol VCBO VCER VEBO IC Limits -40 -40 -5 -2 -3 1 10 1 150 -55~+150 Unit V V V A(DC) A(Pulse) W W(Tc=25C) W C C 0.65Max. 0.5 (1) (2) (3) 1 2.54 2.54 1.05 2.3 0.45 0.8Min. PC 2 Taping specifications ROHM : ATV 1 Single pulse Pw=10ms 2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger. (1) Emitter (2) Collector (3) Base !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1183 CPT3 1k~200k TL 2500 2SB1239 ATV 1k~ T146 2500 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol BVCBO BVCER BVEBO ICBO IEBO VCE(sat) hFE Cob Min. -40 -40 -5 - - - 1000 1000 - Typ. - - - - - - - - 11 Max. - - - -1 -1 -1.5 20000 - - Unit V V V A A V - - pF Conditions IC=-50A IC=-1mA, RBE=10k IE=-50A VCB=-24V VEB=-4V IC/IB=-0.6A/-1.2mA VCE/IC=-2V/-0.5A VCB=-10V, IE=0A, f=1MHz DC current transfer ratio Output capacitance 2SB1183 2SB1239 5.1 6.5 C0.5 |
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